Signatures of atomic-scale structure in the energy dispersion and coherence of a Si quantum-dot qubit

被引：18

作者：

Abadillo-Uriel, J. C. ^{[1
,2
]}

Thorgrimsson, Brandur ^{[2
]}

Kim, Dohun ^{[3
,4
]}

Smith, L. W. ^{[2
,6
]}

Simmons, C. B. ^{[2
]}

Ward, Daniel R. ^{[2
]}

Foote, Ryan H. ^{[2
]}

Corrigan, J. ^{[2
]}

Savage, D. E. ^{[5
]}

Lagally, M. G. ^{[5
]}

Calderon, M. J. ^{[1
]}

Coppersmith, S. N. ^{[2
]}

Eriksson, M. A. ^{[2
]}

Friesen, Mark ^{[2
]}

机构：

[1] CSIC, ICMM, Mat Sci Factory, Sor Juana Ines de la Cruz 3, E-28049 Madrid, Spain

[2] Univ Wisconsin, Dept Phys, Madison, WI 53706 USA

[3] Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South Korea

[4] Seoul Natl Univ, Inst Appl Phys, Seoul 08826, South Korea

[5] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA

[6] Univ Cambridge, Dept Phys, Cavendish Lab, JJ Thomson Ave, Cambridge CB3 OHE, England

来源：

PHYSICAL REVIEW B | 2018年 / 98卷 / 16期

关键词：

SILICON;

D O I：

10.1103/PhysRevB.98.165438

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report anomalous behavior in the energy dispersion of a three-electron double-quantum-dot hybrid qubit and argue that it is caused by atomic-scale disorder at the quantum-well interface. By employing tight-binding simulations, we identify potential disorder profiles that induce behavior consistent with the experiments. The results indicate that disorder can give rise to "sweet spots" where the decoherence caused by charge noise is suppressed, even in a parameter regime where true sweet spots are unexpected. Conversely, "hot spots" where the decoherence is enhanced can also occur. Our results suggest that interfacial atomic structure can be used in particular cases as a tool to enhance the fidelity of Si double-dot qubits.

引用

页数：7

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