Direct growth of vertical structure MoS2 nanosheets array film via CVD method for photodetection

被引：21
作者：
Liu, Shuang [1 ,2 ]
Nie, Changbin [1 ]
Zhou, Dahua [1 ]
Shen, Jun [1 ]
Feng, Shuanglong [1 ]
机构：
[1] Chinese Acad Sci, Micronano Mfg & Syst Integrat Ctr, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
[2] Univ Chinese Acad Sci, 19A Yuquan Rd, Beijing 100049, Peoples R China
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2020年 / 117卷
基金：
中国国家自然科学基金;
关键词：
Vertical MoS2; Nanosheets; Photodetector; Chemical vapor deposition; PHOTOCATALYTIC ACTIVITY; EPITAXIAL-GROWTH; SINGLE-LAYER; LARGE-AREA; HETEROSTRUCTURE; CONSTRUCTION; BATTERIES; WSE2;
D O I：
10.1016/j.physe.2019.113592
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The vertical structure MoS2 nanosheets array thin film for sensitive photodetection was fabricated on TiO2 buffer layer substrate by chemical vapor deposition (CVD) method for the first time. Discussion on the growth mechanism reveals the important roles of TiO2 buffer layer in the vertical direction growth. Vertical structure MoS2 nanosheets array film based photodetector presents a high sensitivity for 532 nm light, and exhibits a fast response time and a high detectivity of D* approximate to 3.325 x 10(11) cm Hz(1/2)/W. This work shows that the distinctive advantages of vertical structure MoS2 for sensitive photoelectric detection.
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页数：6
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