Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides

被引:112
作者
Xu, Shuigang [1 ,2 ]
Wu, Zefei [1 ,2 ]
Lu, Huanhuan [1 ,2 ]
Han, Yu [1 ,2 ]
Long, Gen [1 ,2 ]
Chen, Xiaolong [1 ,2 ]
Han, Tianyi [1 ,2 ]
Ye, Weiguang [1 ,2 ]
Wu, Yingying [1 ,2 ]
Lin, Jiangxiazi [1 ,2 ]
Shen, Junying [1 ,2 ]
Cai, Yuan [1 ,2 ]
He, Yuheng [1 ,2 ]
Zhang, Fan [3 ]
Lortz, Rolf [1 ,2 ]
Cheng, Chun [4 ,5 ]
Wang, Ning [1 ,2 ]
机构
[1] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[2] Hong Kong Univ Sci & Technol, Ctr Quantum Mat 1D 2D, Hong Kong, Hong Kong, Peoples R China
[3] Univ Texas Dallas, Dept Phys, Richardson, TX 75080 USA
[4] South Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Peoples R China
[5] South Univ Sci & Technol, Shenzhen Key Lab Nanoimprint Technol, Shenzhen 518055, Peoples R China
关键词
transition metal dichalcogenides; h-BN encapsulation; field-effect transistor; contact resistance; quantum oscillations; FIELD-EFFECT TRANSISTORS; ELECTRONIC TRANSPORT; MONOLAYER; GRAPHENE; MOBILITY; PHOTOLUMINESCENCE; DEVICES;
D O I
10.1088/2053-1583/3/2/021007
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Low carrier mobility and high electrical contact resistance are two major obstacles prohibiting explorations of quantum transport in TMDCs. Here, we demonstrate an effective method to establish low-temperature Ohmic contacts in boron nitride encapsulated TMDC devices based on selective etching and conventional electron-beam evaporation of metal electrodes. This method works for most extensively studied TMDCs in recent years, including MoS2, MoSe2, WSe2, WS2, and 2H-MoTe2. Low electrical contact resistance is achieved at 2 K. All of the few-layerTMDCdevices studied show excellent performance with remarkably improved field-effect mobilities ranging from 2300 to 16 000 cm 2 V-1 s(-1), as verified by the high carrier mobilities extracted from Hall effect measurements. Moreover, both high-mobility n-type and p-typeTMDCchannels can be realized by simply using appropriate contact metals. Prominent Shubnikov-de Haas oscillations have been observed and investigated in these high-quality TMDC devices.
引用
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页数:9
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