Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides

被引：113

作者：

Xu, Shuigang ^{[1
,2
]}

Wu, Zefei ^{[1
,2
]}

Lu, Huanhuan ^{[1
,2
]}

Han, Yu ^{[1
,2
]}

Long, Gen ^{[1
,2
]}

Chen, Xiaolong ^{[1
,2
]}

Han, Tianyi ^{[1
,2
]}

Ye, Weiguang ^{[1
,2
]}

Wu, Yingying ^{[1
,2
]}

Lin, Jiangxiazi ^{[1
,2
]}

Shen, Junying ^{[1
,2
]}

Cai, Yuan ^{[1
,2
]}

He, Yuheng ^{[1
,2
]}

Zhang, Fan ^{[3
]}

Lortz, Rolf ^{[1
,2
]}

Cheng, Chun ^{[4
,5
]}

Wang, Ning ^{[1
,2
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China

[2] Hong Kong Univ Sci & Technol, Ctr Quantum Mat 1D 2D, Hong Kong, Hong Kong, Peoples R China

[3] Univ Texas Dallas, Dept Phys, Richardson, TX 75080 USA

[4] South Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Peoples R China

[5] South Univ Sci & Technol, Shenzhen Key Lab Nanoimprint Technol, Shenzhen 518055, Peoples R China

来源：

2D MATERIALS | 2016年 / 3卷 / 02期

关键词：

transition metal dichalcogenides; h-BN encapsulation; field-effect transistor; contact resistance; quantum oscillations; FIELD-EFFECT TRANSISTORS; ELECTRONIC TRANSPORT; MONOLAYER; GRAPHENE; MOBILITY; PHOTOLUMINESCENCE; DEVICES;

D O I：

10.1088/2053-1583/3/2/021007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Low carrier mobility and high electrical contact resistance are two major obstacles prohibiting explorations of quantum transport in TMDCs. Here, we demonstrate an effective method to establish low-temperature Ohmic contacts in boron nitride encapsulated TMDC devices based on selective etching and conventional electron-beam evaporation of metal electrodes. This method works for most extensively studied TMDCs in recent years, including MoS2, MoSe2, WSe2, WS2, and 2H-MoTe2. Low electrical contact resistance is achieved at 2 K. All of the few-layerTMDCdevices studied show excellent performance with remarkably improved field-effect mobilities ranging from 2300 to 16 000 cm 2 V-1 s(-1), as verified by the high carrier mobilities extracted from Hall effect measurements. Moreover, both high-mobility n-type and p-typeTMDCchannels can be realized by simply using appropriate contact metals. Prominent Shubnikov-de Haas oscillations have been observed and investigated in these high-quality TMDC devices.

引用

页数：9

共 36 条

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