Optical and electrical properties of ZnO films, codoped with Al and Ga deposited at room temperature by an RF sputtering method

被引：21

作者：

Kim, Jong-Pil ^{[1
]}

Bae, Jong-Seong ^{[1
]}

Hong, Tae-Eun ^{[1
]}

Won, Mi-Sook ^{[1
]}

Yoon, Jang-Hee ^{[1
]}

Lee, Byoung-Seob ^{[1
]}

Lee, Haeng-Jung ^{[1
]}

机构：

[1] Korea Basic Sci Inst Susan Ctr, Surface Properties Res Team, Pusan 609735, South Korea

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 22期

关键词：

Codoping Al and Ga-doped ZnO; Band gap energy; Working pressure; Resistivity; THIN-FILMS;

D O I：

10.1016/j.tsf.2010.04.050

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO thin films, codoped with Al and Ga, were prepared on fused quartz (FQ) and cyclo-olefin polymer (COP) substrates using a radial frequency magnetron sputtering technique at room temperature, without the introducing of oxygen. The elemental distributions of Al, Ga, Zn and O throughout the films were found and no compositional variation in working pressure was observed. A resistivity of 0.03-4.07 Omega cm in AGZ/FQ films (Fig. 2b and 0.04-5.73 Omega cm in AGZ/COP films as well as a transmittance of above 85% were obtained by appropriate control of the working pressure. Compared with the band gap energy of single crystal ZnO, the band gap energy of the AGZ/FQ thin film was somewhat higher. The band gap energy of the AGZ/FQ films showed a tendency to increase with the working pressure employed. Crown Copyright (C) 2010 Published by Elsevier B.V. All rights reserved.

引用

页码：6179 / 6183

页数：5

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