Characterization of multi- and single-layer structure SAW sensor

被引:19
作者
Ahmadi, S [1 ]
Hassani, F [1 ]
Korman, C [1 ]
Rahaman, M [1 ]
Zaghloul, M [1 ]
机构
[1] George Washington Univ, Dept Elect & Comp Engn, Washington, DC 20052 USA
来源
PROCEEDINGS OF THE IEEE SENSORS 2004, VOLS 1-3 | 2004年
关键词
SAW; sensor; IDT; wave velocity; zinc oxide; lithium niobate; resonant frequency; insertion loss;
D O I
10.1109/ICSENS.2004.1426375
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Design of a CMOS compatible thin ZnO film base, and a LiNbO3 wafer base, Surface Acoustics Wave (SAW) gas sensors that are highly selective and sensitive are described. Furthermore, Design an post CMOS processing fabrication steps that utilizes micro-electro-mechanical systems (MEMS) techniques to implement SAW gas sensor is presented. Rayleigh wave velocity for various ZnO film thickness is simulated and results are presented. Velocity calculation is based on a computer simulation of multiplayer (ZnO/SiO2/Si) structure that uses wave equations. Simulation results and experimental measurements of SA W sensors with single layer bulk LiNbO3 wafer are shown, and compared. Moreover, results of experimentation and simulation of wave velocity for a yz-cut LiNbO3 wafer is shown.
引用
收藏
页码:1129 / 1132
页数:4
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