Photoacoustic spectroscopy analysis of thin semiconductor samples

被引：5

作者：

Bychto, L. ^{[1
]}

Malinski, M. ^{[1
]}

机构：

[1] Koszalin Univ Technol, Fac Elect & Comp Sci, 2 Sniadeckich St, PL-75453 Koszalin, Poland

来源：

OPTO-ELECTRONICS REVIEW | 2018年 / 26卷 / 03期

关键词：

Photothermal spectroscopy; Photoacoustics; Optical absorption coefficient spectra; Thin semiconductor films; OPTICAL-PROPERTIES; BAND-GAP; ANNEALING PROCESSES; FILMS; SPECTRA; GROWTH; CDTE;

D O I：

10.1016/j.opelre.2018.06.005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper is an analysis of determination possibility of the optical absorption coefficient spectra of thin semiconductor layers from their normalized photoacoustic amplitude spectra. Influence of multiple reflections of light in thin layers on their photoacoustic and optical absorption coefficient spectra is presented and discussed in detail. Practical formulae for the optical absorption coefficient spectrum as a function of the normalized photoacoustic amplitude spectrum are derived and presented. Next, they were applied for computations of the optical absorption coefficient spectra of thin In2S3 thin layers deposited on a glass substrate. This method was experimentally verified with the optical transmission method. (C) 2018 Association of Polish Electrical Engineers (SEP). Published by Elsevier B.V. All rights reserved.

引用

页码：217 / 222

页数：6

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