Ultrafast decay of surface photo-voltage effect on n-type GaAs(100) surface

被引：16

作者：

Tokudomi, Shinji ^{[1
]}

Azuma, Junpei ^{[1
]}

Takahashi, Kazutoshi ^{[1
]}

Kamada, Masao ^{[1
]}

机构：

[1] Saga Univ, Synchrotron Light Applicat Ctr, Saga 8408502, Japan

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 2007年 / 76卷 / 10期

关键词：

surface photo-voltage; SPV; time-resolved photoemission spectroscopy; TR-PES; GaAs(100); ultrafast; two-photon excitation;

D O I：

10.1143/JPSJ.76.104710

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Surface photo-voltage (SPV) effect on n-type GaAs(100) has been investigated with a newly developed time-resolved photoemission spectroscopy, in which the sample surface is excited by onephoton of the pump pulse and the photoemission is measured by two-photon excitation of the probe pulse. Ultrafast decay of the SPV was found in a several picosecond range at 300 and 100K, corresponding to the hot-electron lifetime in GaAs. The slow SPV decay was also observed in a few hundred picoseconds, due to the thermalized electrons.

引用

页数：4

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