Ultrafast decay of surface photo-voltage effect on n-type GaAs(100) surface

被引：16
|
作者：
Tokudomi, Shinji [1 ]
Azuma, Junpei [1 ]
Takahashi, Kazutoshi [1 ]
Kamada, Masao [1 ]
机构：
[1] Saga Univ, Synchrotron Light Applicat Ctr, Saga 8408502, Japan
来源：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 2007年 / 76卷 / 10期
关键词：
surface photo-voltage; SPV; time-resolved photoemission spectroscopy; TR-PES; GaAs(100); ultrafast; two-photon excitation;
D O I：
10.1143/JPSJ.76.104710
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Surface photo-voltage (SPV) effect on n-type GaAs(100) has been investigated with a newly developed time-resolved photoemission spectroscopy, in which the sample surface is excited by onephoton of the pump pulse and the photoemission is measured by two-photon excitation of the probe pulse. Ultrafast decay of the SPV was found in a several picosecond range at 300 and 100K, corresponding to the hot-electron lifetime in GaAs. The slow SPV decay was also observed in a few hundred picoseconds, due to the thermalized electrons.
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页数：4
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