Si Cryo-CMOS and Quantum Dots for Quantum Computing Applications

被引：1

作者：

Wu, Yu-Jui ^{[1
]}

Chiang, Chih-Ying ^{[1
]}

Tsao, Hung-Yu ^{[2
]}

Lin, Min-Jui ^{[2
]}

Hsieh, Pu-Jia ^{[2
]}

Yeh, Ching-Chen ^{[3
]}

Syong, Wei-Ren ^{[3
]}

Hsu, Kai-Syang ^{[3
]}

Liang, Chi-Te ^{[3
]}

Chen, Jeng-Chung ^{[4
]}

Li, Jiun-Yun ^{[1
,2
,5
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

[3] Natl Taiwan Univ, Grad Inst Appl Phys, Taipei 10617, Taiwan

[4] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan

[5] Taiwan Semicond Res Inst, Natl Appl Res Labs, Hsinchu 30091, Taiwan

来源：

2021 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA) | 2021年

关键词：

D O I：

10.1109/VLSI-TSA51926.2021.9440109

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we present measurements of Si n-MOSFETs at temperatures ranging from1.5 K to 300 K to and Coulomb blockade in a gate-defined Si MOS quantum dot (QD). Current-voltage (I-V) characteristics of Si n-MOSFETs are presented with a decreasing subthreshold swing and an increasing threshold voltage as the temperature is reduced. Clear quantum oscillations of the QD conductance due to Coulomb blockade are demonstrated at 1.5 K.

引用

页数：2

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