Recent Progress of 220-280 nm-band AlGaN based deep-UV LEDs

被引：6

作者：

Hirayama, Hideki ^{[1
]}

机构：

[1] RIKEN, Wako, Saitama 3510198, Japan

来源：

LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XIV | 2010年 / 7617卷

关键词：

deep-UV LED; AlGaN; AlN; quaternary InAlGaN; threading dislocation density; MOCVD; LIGHT-EMITTING DIODE; ULTRAVIOLET EMISSION; QUATERNARY INALGAN; ENHANCEMENT;

D O I：

10.1117/12.845512

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrated 222-282 nm AlGaN-based efficient deep-ultraviolet (DUV) light-emitting diodes (LEDs) fabricated on low threading dislocation density (TDD) AlN template. Low TDD AlN on sapphire were realized by using ammonia (NH3) pulse-flow multilayer (ML) growth technique. We obtained quite high IQE (similar to 80%) from slightly-In-incorporated (0.3%) InAlGaN QWs and obtained over 10 mW CW output power for 280 nm-band InAlGaN based LED. The maximum output power obtained were over 10 mW for 264-282 nm LEDs, 1.2-5mW for 240-256 nm LEDs and sub-milliwatt for 222-237 nm LEDs. The maximum external quantum efficiency (EQE) of 280 nm-band LED was 1.2%.

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页数：11

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