3D Coupled Electro-Thermal Simulations for SOI FinFET with Statistical Variations Including the Fin Shape Dependence of the Thermal Conductivity

被引：0

作者：

Wang, L. ^{[1
]}

Brown, A. R. ^{[2
,3
]}

Nedjalkov, M.

Alexander, C. ^{[2
,3
]}

Cheng, B. ^{[1
,2
,3
]}

Millar, C. ^{[2
,3
]}

Asenov, A. ^{[1
,2
,3
]}

机构：

[1] Univ Glasgow, Sch Engn, Glasgow, Lanark, Scotland

[2] Gold Standard Simulat Ltd, Glasgow, Lanark, Scotland

[3] TU Wien, Inst Microelect, A-1040 Vienna, Austria

来源：

2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2014年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thermal and electrical transport in FinFET with statistical variations is investigated by 3D coupled electro-thermal simulation, using statistical-variability-aware device simulator GARAND with built-in thermal simulation module. The module employs a new formula for the calculation of the thermal conductivity in the fin region with fin shape dependence. An SOI FinFET structure with combined statistical sources of GER, FER and MGG is studied, with a focus on the lattice temperature profile and the statistical distribution of on current.

引用

页数：3

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