Soft magnetic properties of ion beam reactively sputtered Fe-N thin films on Ge(100)

被引:9
|
作者
Ding, XZ
Zhang, FM
Sun, YL
Zhou, ZY
Yan, JS
Shen, HL
Wang, X
Liu, XH
Shen, DF
机构
[1] Acad Sinica, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China
[2] Acad Sinica, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
[3] Acad Sinica, Shanghai Inst Met, Lab Opt Disks, Shanghai 200050, Peoples R China
来源
关键词
iron nitride films; magnetic properties; reactive ion beam sputtering;
D O I
10.1016/S0257-8972(98)00369-7
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Several iron nitride thin films with nitrogen concentration less than 15 at.% were synthesized on Ge(100) wafers by a reactive ion beam sputtering method in an ammonia atmosphere. The composition and microstructure of these films were monitored by Rutherford backscattering spectroscopy analyses and X-ray diffraction experiments. The soft magnetic properties of these films were measured by a vibrating sample magnetometer. The changes in microstructure and magnetic properties during an annealing process at 180 degrees C under a Bowing nitrogen atmosphere were investigated. It was found that both the saturation magnetization sigma(s) and the coercivity H-c of these Fe-N films are higher than that of pure iron film. However, no direct relationship between the higher a, values and the alpha' + alpha" phase could be found in the as-synthesized and annealed iron nitride films. (C) 1998 Elsevier Science S.A.
引用
收藏
页码:156 / 160
页数:5
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