Magnetic resonance studies of GaN-based LEDs

被引：1

作者：

Carlos, WE ^{[1
]}

Nakamura, S

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] Nichia Chem Ind Ltd, Tokushima 774, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

gallium nitride; magnetic resonance; LED; defects; EDMR; recombination;

D O I：

10.1016/S0022-0248(98)00296-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Electrically detected magnetic resonance (EDMR), electrically excited and optically detected magnetic resonance, photocurrent-detected magnetic resonance and the photo-quenching of EDMR are employed to study radiative and non-radiative recombination processes in single quantum well diodes. The effects of high current stress are studied in addition to recombination in unstressed devices. The signals are dominated by a broad line (g approximate to 2.01; Delta B approximate to 13 mT) which can be optically quenched by absorption in the quantum well of the diode. Measurements on diodes which have been subjected to high current stressing reveal another resonance located in an area of the diode in series with the quantum well and these results also indicate that the broad line is due to more than one defect level. (C) 1998 Elsevier Science B.V. All rights reserved.

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页码：794 / 797

页数：4

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