Generation of Ensembles of Individually Resolvable Nitrogen Vacancies Using Nanometer-Scale Apertures in Ultrahigh-Aspect Ratio Planar Implantation Masks

被引：42

作者：

Bayn, Igal ^{[1
,2
,3
]}

Chen, Edward H. ^{[1
,2
]}

Trusheim, Matthew E. ^{[1
,2
]}

Li, Luozhou ^{[1
,2
]}

Schroeder, Tim ^{[1
,2
]}

Gaathon, Ophir ^{[1
,2
,3
]}

Lu, Ming ^{[4
]}

Stein, Aaron ^{[4
]}

Liu, Mingzhao ^{[4
]}

Kisslinger, Kim ^{[4
]}

Clevenson, Hannah ^{[1
,2
]}

Englund, Dirk ^{[1
,2
]}

机构：

[1] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

[2] MIT, Elect Res Lab, Cambridge, MA 02139 USA

[3] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA

[4] Brookhaven Natl Lab, Ctr Funct Nanomat, Upton, NY 11973 USA

来源：

NANO LETTERS | 2015年 / 15卷 / 03期

关键词：

implantation mask; nanoaperture; diamond color centers; nitrogen vacancy; spin chain; quantum computing; SPIN COHERENCE TIME; SINGLE SPINS; ENTANGLEMENT; DIAMOND; CENTERS; QUBITS;

D O I：

10.1021/nl504441m

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A central challenge in developing magnetically coupled quantum registers in diamond is the fabrication of nitrogen vacancy (NV) centers with localization below similar to 20 nrn to enable fast dipolar interaction compared to the NV decoherence rate. Here, we demonstrate the targeted, high throughput formation of NV centers using masks with b. thickness of 270 nm and feature sizes down to similar to 1 run. Superresolution imaging resolves NVs with a full-width maximum distribution of 26 +/- 7 nm and a distribution of NV-NV separations of 16 +/- 5 nm.

引用

页码：1751 / 1758

页数：8

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