Surface-Potential-Based Analytical Model of Low-Frequency Noise for Planar-Type Tunnel Field-Effect Transistors

被引：3

作者：

Park, Yeong-Hun ^{[1
]}

Yi, Boram ^{[2
]}

Kim, Seung-Hwan ^{[3
]}

Shim, Ju-Hyun ^{[2
]}

Song, Hyeong-Sub ^{[4
]}

Song, Hyun-Dong ^{[4
]}

Shin, Hyun-Jin ^{[4
]}

Lee, Hi-Deok ^{[4
]}

Yang, Ji-Woon ^{[2
]}

机构：

[1] Samsung Elect, Foundry Div, Yongin 17113, South Korea

[2] Korea Univ, Dept Elect & Informat Engn, Sejong 30019, South Korea

[3] SK Hynix, Res & Dev Div, Icheon 17336, South Korea

[4] Chungnam Natl Univ, Dept Elect Engn, Daejeon 34134, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2021年 / 68卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

TFETs; Logic gates; Semiconductor device modeling; Analytical models; Integrated circuit modeling; Computational modeling; Tunneling; Band-to-band tunneling (BTBT); compact model; flicker noise; low-frequency noise (LFN); tunneling FET; FET;

D O I：

10.1109/TED.2021.3087117

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Analytical models of low-frequency noise (LFN) characteristics for planar-type tunnel field-effect-transistors (TFETs) are proposed. A surface-potential-based current-voltage model is developed to physically represent the current fluctuation due to charge trapping/detrapping in the gate dielectric. An LFN model can be analytically derived from the current fluctuation with a reasonable approximation. The proposed model is verified using Technology Computer Aided Design (TCAD) and measurement data, which are in good agreement with each other. The analytical model can not only serve as a valuable reference and tool for low-power analog circuit design but also provide physical insights into the LFN of TFETs.

引用

页码：4051 / 4056

页数：6

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