Fluorinated tin oxide (FTO) deposited at room temperature: Influence of hydrogen and oxygen in the sputtering gas on the optical and electrical properties

被引：10

作者：

Moran-Pedroso, Maria ^{[1
]}

Sanchez-Marcos, Jorge ^{[2
]}

de Andres, Alicia ^{[1
]}

Prieto, Carlos ^{[1
]}

机构：

[1] CSIC, ICMM, Madrid 28049, Spain

[2] Univ Autonoma Madrid, Dept Quim Fis Aplicada, E-28049 Madrid, Spain

来源：

APPLIED SURFACE SCIENCE | 2018年 / 459卷

关键词：

Transparent conductive materials; Room temperature film preparation; SNO2; THIN-FILMS; TRANSPARENT; FIGURE; MERIT;

D O I：

10.1016/j.apsusc.2018.08.011

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The optical and electrical properties of fluorinated fin oxide (FTO) films deposited at room temperature by sputtering were investigated. In addition to small amount of oxygen to preserve highly transparent films, electrical resistivity become decreased two orders of magnitude by using appropriate hydrogen content in the sputtering gas. Films deposited with Ar-(93%)/O-2((5%))/H-2((2%)) gas mixture show maximal values of conductivity, charge carrier density and mobility as well as excellent transparency. Taking into account the film characterization carried out by Rutherford backscattering spectrometry (RBS), a mechanism is proposed to explain the observed optical and electrical dependence with the hydrogen content in the film.

引用

页码：349 / 353

页数：5

共 23 条

[1] Indium-tin oxide thin films deposited at room temperature on glass and PET substrates: Optical and electrical properties variation with the H2-Ar sputtering gas mixture [J].