Electrical properties of Π-conjugated Fe-TPP molecular solar cell device

被引：12
作者：
Aziz, M. S. [1 ]
机构：
[1] Mansoura Univ, Fac Sci, Dept Phys, Dumyat 3451, Egypt
来源：
SOLID-STATE ELECTRONICS | 2008年 / 52卷 / 08期
关键词：
physical vapor deposition; organic semiconductor; solar cell;
D O I：
10.1016/j.sse.2008.01.020
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A heterojunction device of Au/Fe-TPP/n-Si/Al was assembled by thermally evaporated deposition. The dark current density-voltage characteristics of device were investigated. Results showed a rectification behavior. Measurements of thermo electric power confirm that Fe-TPP thin film behaves as p-type semiconductors. Electronic parameters such as barrier height, diode ideality factor, series resistance, shunt resistance were found to be 0.83 eV, 1.5, 7 x 10(5) Omega and 2 x 10(10) Omega, respectively. The Au/Fc-TPP/n-Si/Al device indicates a photovoltaic behavior with ail open circuit voltage V-oc of 0.52 V, short circuit current I-sc of 2.22 x 10(-6) A, fill factor FF of 0.49 and con version efficiency 1.13%, under white light illumination power 50 W/m(2). (C) 2008 Elsevier Ltd. All rights reserved.
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收藏
页码：1145 / 1148
页数：4
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