Insight into metal-enhanced oxidation using barium on 4H-SiC surfaces

被引：13

作者：

Chanthaphan, Atthawut ^{[1
]}

Katsu, Yoshihito ^{[1
]}

Hosoi, Takuji ^{[1
]}

Shimura, Takayoshi ^{[1
]}

Watanabe, Heiji ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 12期

基金：

日本学术振兴会;

关键词：

ORIENTATION DEPENDENCE; THERMAL-OXIDATION; SI(111) SURFACES; SI(100) SURFACE; SILICON-CARBIDE; ALKALI-METALS; INTERFACE; DENSITY; OXIDE;

D O I：

10.7567/JJAP.55.120303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metal-enhanced oxidation (MEO) using ultrathin Ba layers on 4H-SiC surfaces was investigated by physical and electrical characterizations. We found that while comparable oxidation rates were enhanced for Si-and C-face surfaces even at a low temperature, significant surface and interface roughness were induced by initial MEO termed the incubation period. Depth profiling revealed that although most Ba atoms aggregated on the oxide surface, a tiny amount (similar to 10(14)cm(-2)) remaining at the oxide interface was responsible for the following stable MEO reaction and the reduced interface state density with the drawbacks of degraded leakage current and breakdown characteristics of SiC-MOS devices. (C) 2016 The Japan Society of Applied Physics

引用

页数：4

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