Insight into metal-enhanced oxidation using barium on 4H-SiC surfaces

被引：13

作者：

Chanthaphan, Atthawut ^{[1
]}

Katsu, Yoshihito ^{[1
]}

Hosoi, Takuji ^{[1
]}

Shimura, Takayoshi ^{[1
]}

Watanabe, Heiji ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 12期

基金：

日本学术振兴会;

关键词：

ORIENTATION DEPENDENCE; THERMAL-OXIDATION; SI(111) SURFACES; SI(100) SURFACE; SILICON-CARBIDE; ALKALI-METALS; INTERFACE; DENSITY; OXIDE;

D O I：

10.7567/JJAP.55.120303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metal-enhanced oxidation (MEO) using ultrathin Ba layers on 4H-SiC surfaces was investigated by physical and electrical characterizations. We found that while comparable oxidation rates were enhanced for Si-and C-face surfaces even at a low temperature, significant surface and interface roughness were induced by initial MEO termed the incubation period. Depth profiling revealed that although most Ba atoms aggregated on the oxide surface, a tiny amount (similar to 10(14)cm(-2)) remaining at the oxide interface was responsible for the following stable MEO reaction and the reduced interface state density with the drawbacks of degraded leakage current and breakdown characteristics of SiC-MOS devices. (C) 2016 The Japan Society of Applied Physics

引用

页数：4

共 29 条

[1] First-principles investigations for oxidation reaction processes at 4H-SiC/SiO2 interface and its orientation dependence
Akiyama, Toru
Ito, Ayako
Nakamura, Kohji
Ito, Tomonori
Kageshima, Hiroyuki
Uematsu, Masashi
Shiraishi, Kenji
[J]. SURFACE SCIENCE, 2015, 641 : 174 - 179
[2] A strong reduction in the density of near-interface traps at the SiO2/4H-SiC interface by sodium enhanced oxidation
Allerstam, F.
Olafsson, H. O.
Gudjonsson, G.
Dochev, D.
Sveinbjornsson, E. O.
Rodle, T.
Jos, R.
[J]. JOURNAL OF APPLIED PHYSICS, 2007, 101 (12)
[3] THE DIELECTRIC CONSTANT OF BARIUM OXIDE
BEVER, RS
SPROULL, RL
[J]. PHYSICAL REVIEW, 1951, 83 (04): : 801 - 805
[4] Study of SiO2/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas
Chanthaphan, Atthawut
Hosoi, Takuji
Shimura, Takayoshi
Watanabe, Heiji
[J]. AIP ADVANCES, 2015, 5 (09):
[5] Investigation of unusual mobile ion effects in thermally grown SiO2 on 4H-SiC(0001) at high temperatures
Chanthaphan, Atthawut
Hosoi, Takuji
Mitani, Shuhei
Nakano, Yuki
Nakamura, Takashi
Shimura, Takayoshi
Watanabe, Heiji
[J]. APPLIED PHYSICS LETTERS, 2012, 100 (25)
[6] Doping Dependence of Thermal Oxidation on n-Type 4H-SiC
Daas, B. K.
Islam, M. M.
Chowdhury, Iftekhar A.
Zhao, Feng
Sudarshan, T. S.
Chandrashekhar, M. V. S.
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (01) : 115 - 121
[7] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
DEAL, BE
GROVE, AS
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &
[8] Structure and chemistry of passivated SiC/SiO2 interfaces
Dycus, J. Houston
Xu, Weizong
Lichtenwalner, Daniel J.
Hull, Brett
Palmour, John W.
LeBeau, James M.
[J]. APPLIED PHYSICS LETTERS, 2016, 108 (20)
[9] THE EFFECT OF SR AND BI ON THE SI(100) SURFACE OXIDATION - AUGER-ELECTRON SPECTROSCOPY, LOW-ENERGY ELECTRON-DIFFRACTION, AND X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY
FAN, WC
MESARWI, A
IGNATIEV, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (06): : 4017 - 4020
[10] EFFECT OF BA ON THE OXIDATION OF THE SI(100) SURFACE
FAN, WC
IGNATIEV, A
[J]. PHYSICAL REVIEW B, 1991, 44 (07) : 3110 - 3114

← 1 2 3 →