High-performance inductors on plastic substrate

被引：16

作者：

Guo, LH ^{[1
]}

Zhang, QX ^{[1
]}

Lo, GQ ^{[1
]}

Balasubramanian, N ^{[1
]}

Kwong, DL ^{[1
]}

机构：

[1] Inst Microelect, Singapore 117685, Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 09期

关键词：

CMOS integration; FR-4; plastic substrate; RF inductor; wafer-transfer technology (WTT);

D O I：

10.1109/LED.2005.854379

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Wafer-transfer technology (WTT) has been applied to transfer RF inductors from a silicon wafer to an opaque plastic substrate (FR-4). By completely eliminating silicon substrate, the high performance of integrated inductors (Q-factor > 30 for inductance similar to 3 nH with resonant frequency similar to 23 GHz) has been achieved. Based on the analysis of a modified pi-network model, our results suggest that the performance limitation is switched from being a synthetic mechanism of substrate and metal-ohmic losses on low resistivity Si-substrate to merely a metal-ohmic loss on FR-4. Thus, the inductor patterns, which are optimized currently for RFICs on silicon wafer, can be further optimized to take full advantage of the WTT on new substrate from the newly obtained design freedom.

引用

页码：619 / 621

页数：3

共 11 条

[1] RF CMOS on high-resistivity substrates for system-on-chip applications [J].