Spatially direct and indirect optical transitions observed for AlInAs/AlGaPis quantum dots

被引：3

作者：

Neffati, R. ^{[1
]}

Saidi, I. ^{[1
]}

Ben Radhia, S. ^{[1
]}

Ben Daly, A. ^{[2
]}

Maaref, M. A. ^{[2
]}

Boujdaria, K. ^{[1
]}

Lemaitre, A. ^{[3
]}

Bernardot, E. ^{[4
]}

Testelin, C. ^{[4
]}

机构：

[1] Univ Carthage, Fac Sci Bizerte, Lab Phys Mat Struct & Proprietes, Zarzouna 7021, Bizerte, Tunisia

[2] Univ Carthage, IPEST, Lab Mat Mol & Applicat, BP 51, Tunis 2070, Tunisia

[3] CNRS, UPR 20, Lab Photon & Nanostruct, Route Nozay, F-91460 Marcoussis, France

[4] Univ Paris 06, Sorbonne Univ, CNRS UMR 7588, Inst NanoSci Paris, F-75005 Paris, France

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2016年 / 97卷

关键词：

Aluminum alloys - Ground state - Semiconductor alloys - Gallium alloys - Indium alloys - Nanocrystals;

D O I：

10.1016/j.spmi.2016.07.030

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effects of the Aluminium concentration on the emission of Al0.45In0.55As/AlyGa1-y As quantum dots (QDs) are investigated by photoluminescence (PL), with the excitation power density as a variable parameter. The influence of a varying barrier composition on the QD emission is investigated theoretically and discussed with respect to PL measurements. For the highest barrier composition value (y = 0.77), we interpret the QD emission as originating from indirect type-II transitions involving electrons in the barrier X valley and heavy holes (HH), with S and P symmetry, in Al0.45In0.55As QDs. The PL spectra of the y = 0.38 sample exhibits three lines: two of them are related to indirect type-II transitions, in which the electron ground state belongs to the indirect gap (L and X) minima in the barrier conduction band, whereas the third transition is attributed to a direct type-I transitions. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：529 / 535

页数：7

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