Structural and optical characteristics of silicon nanowires fabricated by wet chemical etching

被引：10

作者：

Zhu, Meiguang ^{[1
]}

Chen, Xuejiao ^{[1
]}

Wang, Zhiliang ^{[1
]}

Chen, Yun ^{[1
]}

Ma, Dianfei ^{[1
]}

Peng, Hui ^{[1
]}

Zhang, Jian ^{[1
]}

机构：

[1] E China Normal Univ, Key Lab Polar Mat & Devices, Minist Educ, Dept Elect Engn, Shanghai 200241, Peoples R China

来源：

CHEMICAL PHYSICS LETTERS | 2011年 / 511卷 / 1-3期

基金：

中国国家自然科学基金;

关键词：

RADIATION-DAMAGE; SURFACES; ARRAYS;

D O I：

10.1016/j.cplett.2011.06.013

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Array-ordered silicon nanowires (SiNWs) were fabricated directly on p-Si substrate by wet chemical etching. The as-prepared SiNWs apparently were composed of a single-crystalline Si core embedded in an amorphous SiO(2) shell (similar to 5 nm). Raman spectra indicated that the surface of as-prepared SiNWs contained a collection of smaller Si crystalline nanograins. The characteristic peaks induced by Si nanograins were observed in the Raman and photoluminescence (PL) spectra due to the quantum confinement effect. The study revealed that the array-ordered SiNWs would have a great potential of application in nanoscale electric and optoelectronic devices by controlling the fabrication processes. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：106 / 109

页数：4

共 23 条

[1] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].