Temperature Characteristics Analysis of Triple-Junction Solar Cell under Concentrated Conditions using Spice Diode Model

被引:1
|
作者
Sakurada, Yuya [1 ]
Ota, Yasuyuki [1 ]
Nishioka, Kensuke [1 ]
机构
[1] Miyazaki Univ, Fac Engn, Miyazaki 8892192, Japan
来源
7TH INTERNATIONAL CONFERENCE ON CONCENTRATING PHOTOVOLTAIC SYSTEMS (CPV-7) | 2011年 / 1407卷
关键词
equivalent circuit; diode parameters; solar cell; SPICE; temperature; concentrated light;
D O I
10.1063/1.3658330
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Using spice diode model, the temperature characteristics of an InGaP/InGaAs/Ge triple-junction solar cell under concentrated light conditions were analyzed in detail. The current-voltage (I-V) characteristics of the single-junction solar cells (InGaP, InGaAs, and Ge solar cells) were measured at various temperatures. From dark I-V characteristics of each single-junction solar cell, the diode parameters and temperature exponents were extracted. The extracted diode parameters and temperature exponents were applied to the equivalent circuit model for the triple-junction solar cell, and the solar cell performance was calculated with considering the temperature characteristics of series resistance. There was good agreement between the measured and calculated I-V characteristics of the triple-junction solar cell at various temperatures under concentrated light conditions.
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页数:4
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