High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm

被引：53

作者：

Bajaj, Sanyam ^{[1
]}

Allerman, Andrew ^{[2
]}

Armstrong, Andrew ^{[2
]}

Razzak, Towhidur ^{[1
]}

Talesara, Vishank ^{[1
]}

Sun, Wenyuan ^{[1
]}

Sohel, Shahadat H. ^{[1
]}

Zhang, Yuewei ^{[1
]}

Lu, Wu ^{[1
]}

Arehart, Aaron R. ^{[1
]}

Akyol, Fatih ^{[1
]}

Rajan, Siddharth ^{[1
]}

机构：

[1] Ohio State Univ, Elect & Comp Engn Dept, Columbus, OH 43210 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 02期

基金：

美国国家科学基金会;

关键词：

Ultra wide bandgap; AlGaN; high Al composition; AlGaN MOSFET; high breakdown field; high Al-content; ELECTRON-MOBILITY TRANSISTORS; OPERATION; TRANSPORT; SAPPHIRE; HEMTS; GAN;

D O I：

10.1109/LED.2017.2780221

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on ultra-wide bandgap (UWBG) Al0.7Ga0.3N channel metal-oxide-semiconductor field-effect transistors (MOSFETs) grown by metal-organic chemical vapor deposition. Employing reverse Al composition graded ohmic contact layers and 20 nm Al2O3 gate-dielectric, 250 nm thick Al0.7Ga0.3N: Si channel MOSFETs resulted in the maximum current density of 0.5 A/mm, which is the highest value reported for AlGaN channels with Al composition >0.25. Transistors with a gate-drain spacing (LGD) of 1.7 mu m demonstrated a breakdown voltage (VDG) of similar to 620 V, translating in an average lateral breakdown field of similar to 3.6 MV/cm. This work establishes UWBG AlGaN as a promising candidate for advanced RF applications.

引用

页码：256 / 259

页数：4

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