Half-harmonic Kelvin probe force microscopy with transfer function correction

被引:17
|
作者
Guo, Senli [1 ]
Kalinin, Sergei V. [1 ]
Jesse, Stephen [1 ]
机构
[1] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
关键词
OXIDES;
D O I
10.1063/1.3684274
中图分类号
O59 [应用物理学];
学科分类号
摘要
An approach for surface potential imaging based on half-harmonic band excitation (BE) in Kelvin probe force microscopy is demonstrated. Using linear and half-harmonic BE enables quantitative correction of the cantilever transfer function. Half-harmonic band excitation Kelvin probe force microscopy (HBE KPFM) thus allows quantitative separation of surface potential and topographic contributions to the signal, obviating the primary sources of topographic cross-talk. HBE KPFM imaging and voltage spectroscopy methods are illustrated for several model systems. (C) 2012 American Institute of Physics. [doi:10.1063/1.3684274]
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页数:4
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