MOS Only Simulated Grounded Negative Resistors

被引：0

作者：

Sunca, Abdullah ^{[1
]}

Cicekoglu, Oguzhan ^{[1
]}

Dundar, Gunhan ^{[1
]}

机构：

[1] Bogazici Univ, Dept Elect & Elect Engg, Istanbul, Turkey

来源：

2011 34TH INTERNATIONAL CONFERENCE ON TELECOMMUNICATIONS AND SIGNAL PROCESSING (TSP) | 2011年

关键词：

MOS; resistance simulation; negative resistor; tunable resistor; active resistor;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a number of tunable grounded negative resistor circuits are presented. These new negative resistors exhibit important features such as simplicity, independent tunability and wide frequency range. One of the introduced negative resistor circuits is simulated using TSMC 0.18 mu m process parameters and compared to a couple of other negative resistors in the literature.

引用

页码：328 / 331

页数：4

共 19 条

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