Growth and electrical characterisation of 6-doped boron layers on (111) diamond surfaces

被引：37

作者：

Edgington, Robert ^{[1
,2
]}

Sato, Syunsuke ^{[3
]}

Ishiyama, Yuichiro ^{[3
]}

Morris, Richard ^{[4
]}

Jackman, Richard B. ^{[1
,2
]}

Kawarada, Hiroshi ^{[3
]}

机构：

[1] UCL, London Ctr Nanotechnol, London WC1H 0AH, England

[2] UCL, Dept Elect & Elect Engn, London WC1H 0AH, England

[3] Waseda Univ, Dept Elect & Photon Syst, Shinjuku Ku, Tokyo 1698555, Japan

[4] Univ Warwick, Dept Phys, Adv SIMS Projects, Coventry CV4 7AL, W Midlands, England

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 03期

基金：

英国工程与自然科学研究理事会;

关键词：

DELTA-DOPED DIAMOND; ELECTRONIC-PROPERTIES; TERMINATED DIAMOND; FABRICATION; DEPENDENCE;

D O I：

10.1063/1.3682760

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A plasma enhanced chemical vapor deposition protocol for the growth of (delta-doping of boron in diamond is presented, using the (111) diamond plane as a substrate for diamond growth. AC Hall effect measurements have been performed on oxygen terminated delta-layers and desirable sheet carrier densities (similar to 10(13) cm(-2)) for field-effect transistor application are reported with mobilities in excess of what would expected for equivalent but thicker heavily boron-doped diamond films. Temperature-dependent impedance spectroscopy and secondary ion mass spectroscopy measurements show that the grown layers have metallic-like electrical properties with high cut-off frequencies and low thermal impedance activation energies with estimated boron concentrations of approximately 10(20) cm(-3). (C) 2012 American Institute of Physics. [doi:10.1063/1.3682760]

引用

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