Influence of source transport rate upon fractions of Mg and Se in Zn1-xMgxSeyTe1-y layers grown by metalorganic vapor phase epitaxy

被引：1

作者：

Saito, Katsuhiko ^{[1
]}

Abiru, Masakatsu ^{[1
]}

Mori, Eiichiro ^{[1
]}

Araki, Yasuhiro ^{[1
]}

Tanaka, Daichi ^{[1
]}

Tanaka, Tooru ^{[1
]}

Guo, Qixin ^{[1
]}

Nishio, Mitsuhiro ^{[1
]}

机构：

[1] Saga Univ, Dept Elect & Elect Engn, Synchrotron Light Applicat Ctr, Saga 8408502, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 7-9 | 2016年 / 13卷 / 7-9期

关键词：

ZnMgSeTe; source transport rate; fraction of Mg and Se; Raman spectrum; surface roughness; SUBSTRATE-TEMPERATURE; ZNMGTE LAYER; MOVPE; ZN1-XMGXSEYTE1-Y; ZNTE; MORPHOLOGY;

D O I：

10.1002/pssc.201510304

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth of undoped Zn(1-x)Mg(x)SeyTe(1-y) layers on (100) ZnTe substrates by metalorganic vapor phase epitaxy has been carried out. The fractions of Mg and Se, Raman property and surface roughness have been characterized as a function of bis-methylcyclopentadienyl-magnesium ((MeCp)(2)Mg) or diethylselenide (DESe) transport rates. It has been demonstrated that the Mg and Se fractions in Zn1-xMgxSeyTe1-y layer can be controlled successfully by these source transport rates. Furthermore, the behaviors of two Raman peaks related to ZnSeTe-like longitudinal optical phonon mode and MgSeTe-like one have been clarified for some Mg and Se fractions in Zn1-xMgxSeyTe1-y layers. It has been shown by varying (MeCp)(2)Mg or DESe transport rates that Zn1-xMgxSeyTe1-y layer nearly-lattice-matched to ZnTe substrate shows low surface roughness. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：443 / 447

页数：5

共 3 条

[1] The effect of substrate temperature upon the compositions of Mg and Se in Zn1-xMgxSeyTe1-y layer grown by MOVPE
Nishio, M.
Saito, K.
Ito, R.
Tanaka, K.
Urata, K.
Nakamura, Y.
Tanaka, T.
Guo, Q. X.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 7-8, 2014, 11 (7-8): : 1202 - 1205
[2] Compositions of Mg and Se, surface morphology, roughness and Raman property of Zn1-xMgxSeyTe1-y layers grown at various substrate temperatures or dopant transport rates by MOVPE
Nishio, Mitsuhiro
Saito, Katsuhiko
Urata, Kensuke
Okamoto, Yasuhiro
Tanaka, Daichi
Araki, Yasuhiro
Abiru, Masakatsu
Mori, Eiichiro
Tanaka, Tooru
Guo, Qixin
JOURNAL OF CRYSTAL GROWTH, 2015, 414 : 114 - 118
[3] Ordering and associated domain structures in zinc and silicon doped Ga0.51In0.49P and GaxIn1-xAsyP1-y layers grown on GaAs by metalorganic vapour phase epitaxy
Seong, TY
Kim, DG
Jang, DH
Lee, JK
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (11): : 5607 - 5611

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