Indium doping effect on GaN in the initial growth stage

被引：3
|
作者：
Yuan, HR [1 ]
Lu, DC [1 ]
Liu, XL [1 ]
Chen, Z [1 ]
Wang, XH [1 ]
Wang, D [1 ]
Han, PD [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2001年 / 30卷 / 08期
基金：
中国国家自然科学基金;
关键词：
GaN; indium doping; initial growth stage; morphology; optical transmission; photoluminescence;
D O I：
10.1007/BF02657720
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Three minutes' growth was carried out to investigate the indium-doping effect on initially grown GaN. Indium-doped and undoped samples were grown by low-pressure metalorganic vapor phase epitaxy. Atomic force microscope observation revealed that In-doping modified the morphology of the nuclei. Indium-doping also enhanced wetting between the buffer and nuclei layers, which was also supported by optical transmission. Photoluminescence suggested that indium-doping obviously enhanced band-edge related emission even in the nucleation stage. X-ray diffraction performed on samples grown for 20 minutes indicated improvement of the crystalline quality through indium-doping. The mechanism of the indium-doping effect was discussed.
引用
收藏
页码：977 / 979
页数：3
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