Structural properties of CuGaxIn1-xSe2 thin films deposited by spray pyrolysis

被引：0
|
作者：
Reddy, KTR [1 ]
Chalapathy, RBV [1 ]
机构：
[1] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 1999年 / 34卷 / 01期
关键词：
CuGa(x)In(1-x)Se(2); thin films; spray pyrolysis; structural properties;
D O I：
10.1002/(SICI)1521-4079(199901)34:1<127::AID-CRAT127>3.0.CO;2-5
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Thin films of CuGa(x)In(1-x)Se(2) (x=0.0-1.0) have been prepared by spray pyrolysis onto soda-lime glass substrates heated to a temperature of 325 degrees C. The structure, crystal orientations, lattice parameters and grain size of the experimental films have been studied using the X-ray diffraction and scanning electron microscopy. All the deposited films were polycrystalline and showed single phase with an intense (112) orientation. The lattice parameters, a and c of the films vary linearly with the change of gallium composition. The grain size of the films decrease with the increase of gallium content.
引用
收藏
页码：127 / 132
页数：6
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