Hall effect: the role of nonequilibrium charge carriers

被引：0

作者：

Molina Valdovinos, S. ^{[1
]}

Gurevich, Yu G. ^{[1
]}

机构：

[1] Inst Politecn Nacl, Ctr Invest & Estudios Avanzados, Dept Fis, Mexico City 07360, DF, Mexico

来源：

REVISTA MEXICANA DE FISICA | 2011年 / 57卷 / 04期

关键词：

Galvanomagnetic phenomena; bipolar semiconductors; recombination; Hall effect; SEMICONDUCTORS; RECOMBINATION; TRANSPORT;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A new model of the Hall effect in the case of a bipolar semiconductor is present. Taking into account the nonequilibrium carriers, thermal generation and recombination processes assisted by traps (Shockley-Read model), the expressions for the electrochemical potential of electrons and holes, Hall field and Hall constant R(H) are obtained. The dependence of these expressions of the distribution of the carriers along the direction of the Hall field in the case of intrinsic and extrinsic semiconductors is studied.

引用

页码：368 / 374

页数：7

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