Vertically Aligned Cadmium Chalcogenide Nanowire Arrays on Muscovite Mica: A Demonstration of Epitaxial Growth Strategy

被引:90
作者
Utama, Muhammad Iqbal Bakti [1 ]
Peng, Zeping [1 ]
Chen, Rui [1 ]
Peng, Bo [1 ]
Xu, Xinlong [1 ]
Dong, Yajie [2 ]
Wong, Lai Mun [3 ]
Wang, Shijie [3 ]
Sun, Handong [1 ]
Xiong, Qihua [1 ,4 ]
机构
[1] Nanyang Technol Univ, Div Phys & Appl Phys, Sch Phys & Math Sci, Singapore 637371, Singapore
[2] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
[3] Agcy Sci Technol & Res, Inst Mat Res & Engn, Singapore 117602, Singapore
[4] Nanyang Technol Univ, Div Microelect, Sch Elect & Elect Engn, Singapore 639798, Singapore
基金
新加坡国家研究基金会;
关键词
Nanowire array; muscovite mica; cadmium chalcogenides; van der Waals epitaxy; self-catalytic; excitonic states; DER-WAALS EPITAXY; RAMAN-SCATTERING; FILMS; PBS; DEPOSITION;
D O I
10.1021/nl1034495
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report a strategy for achieving epitaxial, vertically aligned cadmium chalcogenide (CdS, CdSe, and CdTe) nanowire arrays utilizing van der Waals epitaxy with (001) muscovite mica substrate. The nanowires, grown from a vapor transport process, exhibited diameter uniformity throughout their length, sharp interface to the substrate, and positive correlation between diameter and length with preferential growth direction of [0001] for the monocrystalline wurtzite CdS and CdSe nanowires, but of [111] for zinc blende CdTe nanowires, which also featured abundant twinning boundaries. Self-catalytic vapor-liquid-solid mechanism with hydrogen-assisted thermal evaporation is proposed to intepret the observations. Optical absorption from the as-grown CdSe nanowire arrays on mica at 10 K revealed intense first-order exciton absorption and its longitudinal optical phonon replica. A small Stokes shift (similar to 1.3 meV) was identified, suggesting the high quality of the nanowires. This study demonstrated the generality of van der Waals epitaxy for the growth of nanowire arrays and their potential applications in optical and energy related devices.
引用
收藏
页码:3051 / 3057
页数:7
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