Volume swelling of amorphous SiC during ion-beam irradiation

被引：44

作者：

Ishimaru, M ^{[1
]}

Bae, IT

Hirata, A

Hirotsu, Y

Valdez, JA

Sickafus, KE

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan

[2] Los Alamos Natl Lab, Mat Sci & Technol Div, Los Alamos, NM 87545 USA

来源：

PHYSICAL REVIEW B | 2005年 / 72卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.72.024116

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Relationships between chemical short-range order and volume swelling of amorphous silicon carbide (SiC) under radiation environments have been examined using energy-filtering transmission electron microscopy in combination with imaging plate techniques. Single crystals of 4H-SiC with (0001) orientation were irradiated with 300 keV xenon ions to a fluence of 10(15) cm(-2) at cryogenic (120 K) and elevated (373 K) temperatures. A continuous amorphous layer was formed in both specimens, but the magnitude of their volume change was different: volume swelling becomes more pronounced with decreasing irradiation temperatures. From radial distribution function analyses, it was found that the amount of Si-Si atomic pairs increases more rapidly than that of C-C atomic pairs with the progress of chemical disordering. We discuss the ion-beam-induced swelling in amorphous SiC within the context of our results as well as previous observations.

引用

页数：7

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