10 K Room Temperature LNA for SKA Band 1

被引：0
|
作者：
Schleeh, J. [1 ]
Wadefalk, N. [1 ]
Nilsson, P. A. [2 ]
Grahn, J. [2 ]
机构：
[1] Low Noise Factory, SE-41263 Gothenburg, Sweden
[2] Chalmers, Dept Microtechnol & Nanosci, GigaHertz Ctr, SE-41296 Gothenburg, Sweden
来源：
2016 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2016年
关键词：
InP HEMT; Low Noise Amplifier; SKA;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A room temperature LNA suitable for Square Kilometer Array band 1 (0.35-1.05 GHz) has been designed, fabricated and tested. The design is based on InP HEMTs, and focused on minimizing losses in the input matching network. Noise measurement methods in two different labs were used to confirm the 10 K noise temperature of the LNA. The gain was flat at 50 dB and the input and output return loss better than 10 dB in most of the band.
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页数：4
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