Tailoring of Optical and Electrical Properties of Transition Metal Ions-Doped ZnO-Based Diluted Magnetic Semiconductor Nanoparticles

被引：0

作者：

Mukherjee, Subhrajit ^{[1
]}

Kumar, Shiv ^{[1
]}

Saha, S. ^{[2
]}

Basu, Soumen ^{[3
]}

Chatterjee, S. ^{[4
]}

Ghosh, A. K. ^{[1
]}

机构：

[1] Banaras Hindu Univ, Dept Phys, Mat Res Lab, Varanasi 221005, Uttar Pradesh, India

[2] Banaras Hindu Univ, Dept Chem, Varanasi 221005, Uttar Pradesh, India

[3] Natl Inst Technol Durgapur, Dept Phys, Durgapur 713209, India

[4] Banaras Hindu Univ, Dept Appl Phys, Inst Technol, Varanasi 221005, Uttar Pradesh, India

来源：

ASIAN JOURNAL OF CHEMISTRY | 2011年 / 23卷 / 12期

关键词：

Nanoparticles; Diluted magnetic semiconductor; Band gap tailoring; DC resistivity; THIN-FILMS; SPINTRONICS; FUTURE; ROUTE;

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

To tailor the optical and electrical properties, Fe-doped ZnO diluted magnetic semiconductor nanoparticles have been synthesized via surfactant assisted co-precipitation technique. The single phased samples are characterized by X-ray diffraction. The optical absorption has been studied from UV-VIS spectroscopy and the optical band gap has been estimated. The variation of band gap with the doping concentration has been plotted. To study the optical properties, photoluminescence and FTIR spectroscopy have been employed. DC resistivity has been investigated with variation of temperature. Activation energy of the samples has been calculated following the Arrhenius law.

引用

页码：5553 / 5556

页数：4

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