Near-infrared absorption and semimetal-semiconductor transition in 2 nm ErAs nanoparticles embedded in GaAs and AlAs

被引：27

作者：

Scarpulla, Michael A. ^{[1
]}

Zide, Joshua M. O. ^{[1
]}

LeBeau, James M. ^{[1
]}

Van de Walle, Chris G. ^{[1
]}

Gossard, Arthur C. ^{[1
]}

Delaney, Kris T. ^{[2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Mat Res Lab, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 17期

关键词：

D O I：

10.1063/1.2908213

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report strong near-infrared absorption peaks in epitaxial films of GaAs and AlAs containing approximately 0.5-5% of the semimetal ErAs. The energy of the resonant absorption peak can be changed from 0.62 to 1.0 eV (2.2-1.4 mu m) by variation of the ErAs volume fraction and the substrate temperature. We interpret the infrared absorption in terms of transitions across an energy gap caused by a confinement-induced semimetal-semiconductor transition. An effective mass model relates the changes in nanoparticle diameter observed in transmission electron microscopy to the energy gap. (c) 2008 American Institute of Physics.

引用

页数：3

共 17 条

[1] MAGNETOTRANSPORT IN ULTRATHIN ERAS EPITAXIAL LAYERS BURIED IN GAAS [J].

ALLEN, SJ ;

TABATABAIE, N ;

PALMSTROM, CJ ;

MOUNIER, S ;

HULL, GW ;

SANDS, T ;

DEROSA, F ;

GILCHRIST, HL ;

GARRISON, KC .

SURFACE SCIENCE, 1990, 228 (1-3) :13-15

[2] ERAS EPITAXIAL LAYERS BURIED IN GAAS - MAGNETOTRANSPORT AND SPIN-DISORDER SCATTERING [J].

ALLEN, SJ ;

TABATABAIE, N ;

PALMSTROM, CJ ;

HULL, GW ;

SANDS, T ;

DEROSA, F ;

GILCHRIST, HL ;

GARRISON, KC .

PHYSICAL REVIEW LETTERS, 1989, 62 (19) :2309-2312

[3]

[Anonymous], UNPUB

[4]

Bohren C. F., 1983, ABSORPTION SCATTERIN

[5]

Bransden B. H., 2000, Quantum Mechanics, V2nd

[6] Evidence for a strong surface-plasmon resonance on ErAs nanoparticles in GaAs [J].

Brown, ER ;

Bacher, A ;

Driscoll, D ;

Hanson, M ;

Kadow, C ;

Gossard, AC .

PHYSICAL REVIEW LETTERS, 2003, 90 (07) :4

[7] Reversible tuning of silver quantum dot monolayers through the metal-insulator transition [J].

Collier, CP ;

Saykally, RJ ;

Shiang, JJ ;

Henrichs, SE ;

Heath, JR .

SCIENCE, 1997, 277 (5334) :1978-1981

[8] Infrared surface plasmon resonances due to Er-V semimetallic nanoparticles in III-V semiconductor matrices [J].

Hanson, M. P. ;

Gossard, A. C. ;

Brown, E. R. .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (04)

[9] Ordering of ErAs nanoparticles embedded in epitaxial InGaAs layers [J].

Klenov, Dmitri O. ;

Zide, Joshua M. O. ;

LeBeau, James M. ;

Gossard, Arthur C. ;

Stemmer, Susanne .

APPLIED PHYSICS LETTERS, 2007, 90 (12)

[10] Interface atomic structure of epitaxial ErAs layers on (001)In0.53Ga0.47As and GaAs -: art. no. 241901 [J].

Klenov, DO ;

Zide, JM ;

Zimmerman, JD ;

Gossard, AC ;

Stemmer, S .

APPLIED PHYSICS LETTERS, 2005, 86 (24) :1-3

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