Low noise Sb-heterostructure diode detectors for W-band imaging arrays without RF amplification

被引：7

作者：

Moyer, HP ^{[1
]}

Hsu, TY ^{[1
]}

Bowen, RL ^{[1
]}

Boegeman, YK ^{[1
]}

Deelman, PW ^{[1
]}

Thomas, S ^{[1
]}

Hunter, AT ^{[1
]}

Schulman, JN ^{[1
]}

Luukanen, A ^{[1
]}

Grossman, EN ^{[1
]}

机构：

[1] HRL Labs LLC, Malibu, CA 90265 USA

来源：

PASSIVE MILLIMETER-WAVE IMAGING TECHNOLOGY VIII | 2005年 / 5789卷

关键词：

tunnel diodes; detectors; imaging; image sensors; millimeter wave imaging; millimeter wave diodes;

D O I：

10.1117/12.606730

中图分类号：

TB8 [摄影技术];

学科分类号：

0804 ;

摘要：

The figure of merit for RF detectors, noise-equivalent power (NEP), is determined by the noise divided by the sensitivity. Thus, the challenge is to design a diode structure that has low junction resistance while maintaining a large nonlinearity. This work presents sensitivity and noise measurements for Sb-heterostructure backward diodes with varying barrier thicknesses and cross-sectional areas. Nominal diode areas are 2x2 mu m(2) and 3x4 mu m(2) with 15 angstrom and 20 angstrom barriers. The best NEP measured to date is 1.19 pW/rtHz at 36.5 GHz.

引用

页码：84 / 92

页数：9

共 9 条

[1]

BAHL I, 1988, MICROWAVE SOLID STAT, pCH11

[2]

BURRUS CA, IEEE T MICROWAVE THE, V11, P357

[3] GAAS PLANAR DOPED BARRIER DIODES FOR MILLIMETER-WAVE DETECTOR APPLICATIONS [J].