Effects of heteroatom (boron or nitrogen) substitutional doping on the electronic properties of graphene nanoribbons

被引:16
作者
Wang, Zhiyong [1 ]
Xiao, Jianrong [1 ]
Li, Xinyu [1 ]
机构
[1] Guilin Univ Technol, Coll Sci, Guilin 541008, Peoples R China
关键词
Graphene nanoribbon; Substitutional doping; Electronic properties;
D O I
10.1016/j.ssc.2011.11.002
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The electronic properties of graphene nanoribbons (GNRs) with heteroatom (boron or nitrogen) substitutional doping at different sites are investigated by performing first-principles calculations based on density functional theory. The calculated results show that boron substitutional doping changes the conducting characteristics of GNRs to half-metallic. In contrast, nitrogen substitutional doping results in retention of the half-metallic characteristics of GNRs. It is predicted that the theoretical results may be valuable to the design of GNR-based spintronics devices. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码:64 / 67
页数:4
相关论文
共 29 条
[1]   Electromechanical resonators from graphene sheets [J].
Bunch, J. Scott ;
van der Zande, Arend M. ;
Verbridge, Scott S. ;
Frank, Ian W. ;
Tanenbaum, David M. ;
Parpia, Jeevak M. ;
Craighead, Harold G. ;
McEuen, Paul L. .
SCIENCE, 2007, 315 (5811) :490-493
[2]   The electronic properties of graphene [J].
Castro Neto, A. H. ;
Guinea, F. ;
Peres, N. M. R. ;
Novoselov, K. S. ;
Geim, A. K. .
REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162
[3]   Perspectives on Carbon Nanotubes and Graphene Raman Spectroscopy [J].
Dresselhaus, Mildred S. ;
Jorio, Ado ;
Hofmann, Mario ;
Dresselhaus, Gene ;
Saito, Riichiro .
NANO LETTERS, 2010, 10 (03) :751-758
[4]   Intrinsic Half-Metallicity in Modified Graphene Nanoribbons [J].
Dutta, Sudipta ;
Manna, Arun K. ;
Pati, Swapan K. .
PHYSICAL REVIEW LETTERS, 2009, 102 (09)
[5]   Simulation of graphene nanoribbon field-effect transistors [J].
Fiori, Gianluca ;
Iannaccone, Giuseppe .
IEEE ELECTRON DEVICE LETTERS, 2007, 28 (08) :760-762
[6]   Peculiar localized state at zigzag graphite edge [J].
Fujita, M ;
Wakabayashi, K ;
Nakada, K ;
Kusakabe, K .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1996, 65 (07) :1920-1923
[7]   The rise of graphene [J].
Geim, A. K. ;
Novoselov, K. S. .
NATURE MATERIALS, 2007, 6 (03) :183-191
[8]   Electronic properties of boron and nitrogen doped graphene nanoribbons and its application for graphene electronics [J].
Huang, Bing .
PHYSICS LETTERS A, 2011, 375 (04) :845-848
[9]   Towards graphene nanoribbon-based electronics [J].
Huang, Bing ;
Yan, Qi-min ;
Li, Zuan-yi ;
Duan, Wen-hui .
FRONTIERS OF PHYSICS IN CHINA, 2009, 4 (03) :269-279
[10]   Half-metallicity in hybrid BCN nanoribbons [J].
Kan, Er-Jun ;
Wu, Xiaojun ;
Li, Zhenyu ;
Zeng, X. C. ;
Yang, Jinlong ;
Hou, J. G. .
JOURNAL OF CHEMICAL PHYSICS, 2008, 129 (08)