First-principles calculation for bowing parameter of wurtzite AlxGa1-xN

被引:24
|
作者
Liou, BT [1 ]
Yen, SH
Kuo, YK
机构
[1] Hsiuping Inst Technol, Dept Mech Engn, Taichung 412, Taiwan
[2] Natl Changhua Univ Educ, Dept Phys, Changhua 500, Taiwan
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2005年 / 81卷 / 07期
关键词
D O I
10.1007/s00339-005-3236-y
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Numerical calculation based on first-principles is applied to study the structural characteristics and the band-energy properties of wurtzite AlxGa1-xN. The lattice constants obtained from the equilibrium energy are larger than those obtained from the Vegard's law. The deviation parameter is 0.040 +/- 0.005 angstrom for the a lattice constant and 0.125 +/- 0.009 angstrom for the c lattice constant. The band gap energy is overestimated with the Vegard's law. The bowing parameter of direct (indirect) band gap energy of 0.752 +/- 0.069 eV (0.889 +/- 0.057 eV) is obtained with the equilibrium lattice constants, and 0.352 +/- 0.046 eV (0.271 +/- 0.056 eV) is obtained with the lattice constants derived from the Vegard's law.
引用
收藏
页码:1459 / 1463
页数:5
相关论文
共 50 条
  • [1] First-principles calculation for bowing parameter of wurtzite AlxGa1-xN
    B.-T. Liou
    S.-H. Yen
    Y.-K. Kuo
    Applied Physics A, 2005, 81 : 1459 - 1463
  • [2] First-principles calculation for bowing parameter of wurtzite InxGa1-xN
    Liou, BT
    Lin, CY
    Yen, SH
    Kuo, YK
    OPTICS COMMUNICATIONS, 2005, 249 (1-3) : 217 - 223
  • [3] First-principles investigation of lattice constants and bowing parameters in wurtzite AlxGa1-xN, InxGa1-xN and InxAl1-xN alloys
    Dridi, Z
    Bouhafs, B
    Ruterana, P
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (09) : 850 - 856
  • [4] First-principles calculation of the band gap of AlxGa1-xN and InxGa1-xN
    Nunez-Gonzalez, Roberto
    Reyes-Serrato, Armando
    Posada-Amarillas, Alvaro
    Galvan, Donald H.
    REVISTA MEXICANA DE FISICA, 2008, 54 (02) : 111 - 118
  • [5] INTRINSIC THERMAL CONDUCTIVITY OF WURTZITE ALXGA1-XN, INXGA1-XN AND INXAL1-XN FROM FIRST-PRINCIPLES CALCULATION
    Ma, Jinlong
    Huang, Baoling
    Li, Wu
    Luo, Xiaobing
    INTERNATIONAL TECHNICAL CONFERENCE AND EXHIBITION ON PACKAGING AND INTEGRATION OF ELECTRONIC AND PHOTONIC MICROSYSTEMS, 2015, VOL 2, 2015,
  • [6] First-principles calculation of structural and electronic properties of wurtzite AlxGa1-xN, InxGa1-xN, and InxAl1-xN random alloys
    Dridi, Z
    Bouhafs, B
    Ruterana, P
    INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, 2002, : 315 - 319
  • [7] First-principles calculation of the electronic and topological properties of crystalline and amorphous AlxGa1-xN
    Tamariz-Kaufmann, Sebastian P.
    Valladares, Ariel A.
    Valladares, Alexander
    Valladares, R. M.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2015, 420 : 7 - 11
  • [8] First-principles study of cubic AlxGa1-xN alloys
    Dridi, Z
    Bouhafs, B
    Ruterana, P
    COMPUTATIONAL MATERIALS SCIENCE, 2005, 33 (1-3) : 136 - 140
  • [9] Energy band bowing parameter in AlxGa1-xN alloys
    Yun, F
    Reshchikov, MA
    He, L
    King, T
    Morkoç, H
    Novak, SW
    Wei, LC
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (08) : 4837 - 4839
  • [10] Order Structures of AlxGa1-xN Alloys: First-Principles Predictions
    Xu, Li-Chun
    Wang, Ru-Zhi
    Yan, Hui
    JOURNAL OF PHYSICAL CHEMISTRY C, 2012, 116 (01): : 1282 - 1285