Performance of Recessed Anode AlGaN/GaN Schottky Barrier Diode Passivated With High-Temperature Atomic Layer-Deposited Al2O3 Layer

被引：14

作者：

Lee, Jae-Hoon ^{[1
]}

Im, Ki-Sik ^{[2
]}

Kim, Jong Kyu ^{[3
]}

Lee, Jung-Hee ^{[4
]}

机构：

[1] Samsung Elect Co Ltd, Yield Enhancement Team, Yongin 446711, South Korea

[2] Kumoh Natl Inst Technol, Adv Mat Res Ctr, Gumi 39177, South Korea

[3] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 37673, South Korea

[4] Kyungpook Natl Univ, Sch Elect Engn, Daegu 702701, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2019年 / 66卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

AlGaN/GaN; high-temperature atomic layer deposition (ALD); leakage current; Schottky barrier; turn-on voltage; CURRENT COLLAPSE; MECHANISM; MOBILITY; LEAKAGE; GAN; SUPPRESSION; TRANSISTORS; TRANSPORT;

D O I：

10.1109/TED.2018.2875356

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have proposed a method of surface passivation with high-temperature atomic layer-deposited (ALD) Al2O3 layer on the fully recessed anode AlGaN/GaN-based Schottky-barrier diode (SBD) and systematically analyzed the cause of the lateral and the vertical leakage component in the SBD. The forward turn-on voltage of the recessed SBD decreased to 0.38 V from the value of 0.8 V of the nonrecessed SBD due to the lowered barrier height. Application of the ALD Al2O3 surface passivation layer to the recessed SBD, which was deposited at higher temperature (550 degrees C), significantly improved the performances of the proposed SBD such as high on-current of 12 A at 1.5 V and increased breakdown voltage of 780 V with greatly decreased reverse leakage current (at least 3 orders lower inmagnitude), compared to the correspondingon-current of 6 A at 1.5 V and breakdown voltage of 510 V of the reference SBD.

引用

页码：324 / 329

页数：6

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