Enhanced green photoluminescence from ZnO films prepared by TFA-MOD method

被引：7

作者：

Zou, YM ^{[1
]}

Wang, YX ^{[1
]}

Chen, Z ^{[1
]}

Wang, JW ^{[1
]}

Li, Y ^{[1
]}

机构：

[1] Univ Sci & Technol China, Dept Mat Sci & Engn, Hefei 230026, Anhui, Peoples R China

来源：

MATERIALS LETTERS | 2005年 / 59卷 / 24-25期

基金：

中国国家自然科学基金;

关键词：

zinc oxide films; trifluoroacetate metalorganic deposition; luminescence; defects;

D O I：

10.1016/j.matlet.2005.05.015

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Preferentially (002) oriented ZnO films were prepared on Si (111) substrates at relatively low temperature by trifluoroacetate metalorganic deposition (TFA-MOD) method. The growth process, structure and photoluminescence properties were studied by thermogravimetric analysis, Fourier transform infrared absorption, X-ray diffraction, X-ray photoelectron spectra and photoluminescence. The green photoluminescence is enhanced remarkably and becomes visible by naked eyes with the formation of zinc silicate after 900 degrees C annealing. Furthermore, the oxygen partial pressure of annealing ambient also affects the green photoluminescence evidently. Our results support that oxygen antisite defect in ZnO is responsible for the green emission and a small amount of Zn2SiO4 can enhance the green emission. (C) 2005 Elsevier B.V. All rights reserved.

引用

页码：3042 / 3045

页数：4

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