Enhanced green photoluminescence from ZnO films prepared by TFA-MOD method

被引：7
作者：
Zou, YM [1 ]
Wang, YX [1 ]
Chen, Z [1 ]
Wang, JW [1 ]
Li, Y [1 ]
机构：
[1] Univ Sci & Technol China, Dept Mat Sci & Engn, Hefei 230026, Anhui, Peoples R China
来源：
MATERIALS LETTERS | 2005年 / 59卷 / 24-25期
基金：
中国国家自然科学基金;
关键词：
zinc oxide films; trifluoroacetate metalorganic deposition; luminescence; defects;
D O I：
10.1016/j.matlet.2005.05.015
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Preferentially (002) oriented ZnO films were prepared on Si (111) substrates at relatively low temperature by trifluoroacetate metalorganic deposition (TFA-MOD) method. The growth process, structure and photoluminescence properties were studied by thermogravimetric analysis, Fourier transform infrared absorption, X-ray diffraction, X-ray photoelectron spectra and photoluminescence. The green photoluminescence is enhanced remarkably and becomes visible by naked eyes with the formation of zinc silicate after 900 degrees C annealing. Furthermore, the oxygen partial pressure of annealing ambient also affects the green photoluminescence evidently. Our results support that oxygen antisite defect in ZnO is responsible for the green emission and a small amount of Zn2SiO4 can enhance the green emission. (C) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：3042 / 3045
页数：4
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