Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics

被引：36

作者：

Cico, K. ^{[1
]}

Husekov, K. ^{[1
]}

Tapajna, M. ^{[1
]}

Gregusova, D. ^{[1
]}

Stoklas, R. ^{[1
]}

Kuzmik, J. ^{[1
,2
]}

Carlin, J. -F. ^{[3
]}

Grandjean, N. ^{[3
]}

Pogany, D. ^{[2
]}

Froehlich, K. ^{[1
]}

机构：

[1] Slovak Acad Sci, Inst Elect Engn, Ctr Excellence CENG, Bratislava 84104, Slovakia

[2] Inst Solid State Elect TU, A-1040 Vienna, Austria

[3] ICMP, CH-1015 Lausanne, Switzerland

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2011年 / 29卷 / 01期

关键词：

D O I：

10.1116/1.3521506

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report on preparation and electrical characterization of InAlN/AlN/GaN metal-oxide-semiconductor (MOS) high electron mobility transistors (HEMTs) with Al2O3, ZrO2, and GdScO3 gate dielectrics. About 10 nm thick high-kappa dielectrics were deposited by metal organic chemical vapor deposition after the Ohmic contact processing. Application of the gate dielectrics for 2 mu m gate length MOS HEMTs leads to gate leakage current reduction from four to six orders of magnitude compared with Schottky barrier HEMTs. Among others, MOS HEMTs with an Al2O3 gate dielectric shows the highest transconductance (similar to 150 mS/mm) and maximum drain current (similar to 0.77 A/mm) and the lowest sheet resistance of similar to 260 similar to/square. MOS HEMTs with GdScO3 shows the highest breakdown electric field of about 7.0 MV/cm. A deep level transient spectroscopy (DLTS) based analysis revealed the maximum interface state density D-it up to 4 X 10(12), 9 X 10(12), and 3 X 10(13) eV(-1) cm(-2) for Al2O3, ZrO2, and GdScO3/InAlN interface, respectively. (c) 2011 American Vacuum Society. [DOI: 10.1116/1.3521506]

引用

页数：5

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