Baseband Digital Predistortion of a 10 W GaN Power Amplifier

被引：0
|
作者：
Madero-Ayora, M. J. [1 ]
Barataud, D. [2 ]
El Dine, M. Saad [2 ]
Neveux, G. [2 ]
Nebus, J. M. [2 ]
Reina-Tosina, J. [1 ]
Allegue-Martinez, M. [1 ]
Crespo-Cadenas, C. [1 ]
机构：
[1] Univ Seville, Camino Descubrimientos S-N, Seville 41092, Spain
[2] Univ Limoges, XLIM, UMR 6172, 123 Av Albert Thomas, F-87060 Limoges, France
来源：
2011 41ST EUROPEAN MICROWAVE CONFERENCE | 2011年
关键词：
RF POWER; MODEL; VOLTERRA; MEMORY;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, two different models for the baseband digital predistortion of a GaN power amplifier have been applied: the widely-usedMemory Polynomial (MP) model and the recently proposed Behavioral Model with Dynamic Deviation Reduction for Wideband Amplifiers (DVBW). Their performance has been experimentally compared in terms of Adjacent Channel Power Ratio, Error Vector Magnitude and Power Added Efficiency. The DVBW model outperformed in general the MP model, exhibiting also good generalization characteristics.
引用
收藏
页码：341 / 344
页数：4
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