Plasma ehnancement of metalorganic chemical vapor deposition and properties of Er2O3 nanostructured thin films

被引：6
作者：
Giangregorio, Maria M.
Losurdo, Maria
Sacchetti, Alberto
Capezzuto, Pio
Bruno, Giovanni
Malandrino, Graziella
Fragala, Ignazio L.
Lo Nigro, Raffaella
Armelao, Lidia
Barreca, Davide
Tondello, Eugenio
机构：
[1] CNR, IMIP, Inst Inorgan Methodol & Plasmas, I-70126 Bari, Italy
[2] INSTM UdR Bari, I-70126 Bari, Italy
[3] Univ Catania, Dipartimento Sci Chim, I-95125 Catania, Italy
[4] CNR, IMM, Inst Microelect & Microsyst, I-95121 Catania, Italy
[5] CNR, ISTM, I-35131 Padua, Italy
[6] Univ Padua, INSTM, I-35131 Padua, Italy
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 06期
关键词：
D O I：
10.1063/1.2768915
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An O-2 remote plasma metal organic chemical vapor deposition (RP-MOCVD) route is presented for tailoring the structural, morphological, and optical properties of Er2O3 thin films grown on Si(100) using the tris(isopropylcyclopentadienyl)erbium precursor. The RP-MOCVD approach produced highly (100)-oriented, dense, and mechanically stable Er2O3 films with columnar structure.
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页数：3
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