Magnetoresistance in double perovskites Ba2-xLaxFeMoO6

被引：14

作者：

Yang, J. B.

Kim, J.

Woo, Y. S.

Kim, C. S.

Lee, B. W. ^{[1
]}

机构：

[1] Hankuk Univ Foreign Studies, Dept Phys, Yongin 449791, Kyungki, South Korea

[2] Kookmin Univ, Dept Phys, Seoul 136702, South Korea

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2007年 / 310卷 / 02期

关键词：

double perovskite; magnetization; magnetoresistance; antisite disorder;

D O I：

10.1016/j.jmmm.2006.10.916

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied effects of the partial substitution of La3+ for Ba2+ on the magnetoresistance (MR) in Ba2FeMoO6. The substitution of La3+ for Ba2+ results in the increase of antisite disorder which reduces the magnetic moment. The magnitude of MR of Ba2FeMoO6 is greatly reduced by La doping. The MR with low magnetic field of 7 kOe for x = 0 and 0.5 are 5% and 0.5% at room temperature, respectively. These phenomena are explained in terms of an intergrain tunneling at grain boundary and a spin dependent crossing of intragranular barrier originated from antisite disorder. (C) 2006 Elsevier B.V. All rights reserved.

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页码：E664 / E665

页数：2

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