Indium oxide, tin oxide and indium tin oxide nanostructure growth by vapor deposition

被引:9
|
作者
Fung, M. K. [1 ]
Wong, K. K. [1 ]
Chen, X. Y. [1 ]
Chan, Y. F. [3 ]
Ng, A. M. C. [1 ,2 ]
Djurisic, A. B. [1 ]
Chan, W. K. [4 ]
机构
[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[2] S Univ Sci & Technol China, Nanostruct Inst Energy & Environm Res, Div Phys Sci, Shenzhen, Peoples R China
[3] Univ Hong Kong, Electron Microscopy Unit, Hong Kong, Hong Kong, Peoples R China
[4] Univ Hong Kong, Dept Chem, Hong Kong, Hong Kong, Peoples R China
关键词
Metal oxide; Nanowires; ITO; NANOWIRE; PHOTOLUMINESCENCE; CATALYST; ARRAYS; GA;
D O I
10.1016/j.cap.2011.10.006
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Indium oxide, tin oxide and indium tin oxide nanowires have been grown by vapor deposition on Si and quartz substrates. Under the growth conditions used, pure SiOx nanowires, a mixture of SiOx and indium oxide, tin oxide or indium tin oxide nanostructures, or pure indium oxide, tin oxide or indium tin oxide nanostructures could be obtained at different substrate temperatures. The growth mechanism of the obtained nanostructures at different substrate temperatures is discussed. Optical and electrical properties of the deposited pure indium oxide, tin oxide or indium tin oxide nanostructures have been measured, and low sheet resistances on quartz substrates have been obtained for indium oxide and indium tin oxide nanostructures. (C) 2011 Elsevier B. V. All rights reserved.
引用
收藏
页码:697 / 706
页数:10
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