Electrochemical Capacitance-Voltage Profiling of the Free-Carrier Concentration in HEMT Heterostructures Based on InGaAs/AlGaAs/GaAs Compounds

被引：11

作者：

Brunkov, P. N. ^{[1
]}

Gutkin, A. A. ^{[1
]}

Rudinsky, M. E. ^{[1
]}

Ronghin, O. I. ^{[1
]}

Sitnikova, A. A. ^{[1
]}

Shakhmin, A. A. ^{[1
]}

Ber, B. Ya. ^{[1
]}

Kazantsev, D. Yu. ^{[1
]}

Egorov, A. Yu. ^{[2
]}

Zemlyakov, V. E. ^{[3
]}

Konnikov, S. G. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] St Petersburg Acad Univ, Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 195220, Russia

[3] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Moscow Oblast, Russia

来源：

SEMICONDUCTORS | 2011年 / 45卷 / 06期

基金：

俄罗斯基础研究基金会;

关键词：

ELECTRON-MOBILITY TRANSISTORS; SELF-CONSISTENT CALCULATION; HETEROJUNCTIONS; TEMPERATURE; PERFORMANCE; BARRIERS; SYSTEMS; STATES;

D O I：

10.1134/S1063782611060078

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The depth distribution of free carriers over the HEMT structures with quantum-well layers is studied by electrochemical capacitance-voltage profiling. It is shown that the actual distribution of the concentration of free carriers and their energy spectrum in the HEMT structure channel can be obtained by numerical simulation of the results of profiling based on the self-consistent solution of one-dimensional Schrodinger and Poisson equations.

引用

页码：811 / 817

页数：7

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