Numerical analysis of influence of crucible shape on interface shape in a unidirectional solidification process

被引:38
作者
Miyazaw, Hiroaki [2 ]
Liu, Lijun [1 ,3 ]
Kakimoto, Koichi [1 ,2 ]
机构
[1] Kyushu Univ, Res Inst Appl Mech, Kasuga, Fukuoka 8168580, Japan
[2] Kyushu Univ, Grad Sch Engn, Kasuga, Fukuoka 8168580, Japan
[3] Xi An Jiao Tong Univ, Sch Energy & Power Engn, Xian 710049, Shaanxi, Peoples R China
关键词
computer simulation; directional solidification; interfaces; growth from melt; solar cells;
D O I
10.1016/j.jcrysgro.2007.12.056
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We carried out calculations to investigate the melt-crystal (m-c) interface shape with cylindrical and square crucibles and the influence of crucible shape on m-c interface shape using two-dimensional and three-dimensional global analyses. It was found that maximum deformation of the m-c interface occurs near the corner of the square crucible because outgoing heat flux, which has a significant influence on the m-c interface shape, has three-dimensionality. It was also found that shape and dimensions of the crucible have significant influence on the amount of outgoing heat flux. The results indicate that we should control not only heater power, growth ratio and melt flow but also shape and dimensions of crucibles in order to reduce deformation of the m-c interface. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:1142 / 1147
页数:6
相关论文
共 12 条
  • [1] Study on defects and impurities in cast-grown polycrystalline silicon substrates for solar cells
    Arafune, K
    Sasakia, T
    Wakabayashi, F
    Terada, Y
    Ohshita, Y
    Yamaguchi, M
    [J]. PHYSICA B-CONDENSED MATTER, 2006, 376 : 236 - 239
  • [2] The effect of interface shape on anisotropic thermal stress of bulk single crystal during Czochralski growth
    Chen, TC
    Wu, HC
    Weng, CI
    [J]. JOURNAL OF CRYSTAL GROWTH, 1997, 173 (3-4) : 367 - 379
  • [3] Silicon ingot casting:: process development by numerical simulations
    Franke, D
    Rettelbach, T
    Hässler, C
    Koch, W
    Müller, A
    [J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2002, 72 (1-4) : 83 - 92
  • [4] Analysis of temperature and impurity distributions in a unidirectional-solidification process for multi-crystalline silicon of solar cells by a global model
    Kakimoto, Koichi
    Liu, Lijun
    Nakano, Satoshi
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2006, 134 (2-3): : 269 - 272
  • [5] THE EFFECT OF INTERFACE SHAPE ON THERMAL-STRESS DURING CZOCHRALSKI CRYSTAL-GROWTH
    LAMBROPOULOS, JC
    DELAMETTER, CN
    [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 92 (3-4) : 390 - 396
  • [6] Three-dimensional global modeling of a unidirectional solidification furnace with square crucibles
    Liu, Lijun
    Nakano, Satoshi
    Kakimoto, Koichi
    [J]. JOURNAL OF CRYSTAL GROWTH, 2007, 303 (01) : 165 - 169
  • [7] Dynamic simulation of temperature and iron distributions in a casting process for crystalline silicon solar cells with a global model
    Liu, Lijun
    Nakano, Satoshi
    Kakimoto, Koichi
    [J]. JOURNAL OF CRYSTAL GROWTH, 2006, 292 (02) : 515 - 518
  • [8] Partly three-dimensional global modeling of a silicon Czochralski furnace. I. Principles, formulation and implementation of the model
    Liu, LJ
    Kakimoto, K
    [J]. INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, 2005, 48 (21-22) : 4481 - 4491
  • [9] M'Hamdi M., 2005, P 20 EUR PHOT SOL EN, P1236
  • [10] Oxygen and lattice distortions in multicrystalline silicon
    Möller, HJ
    Funke, C
    Lawerenz, A
    Riedel, S
    Werner, M
    [J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2002, 72 (1-4) : 403 - 416