3D visualization and analysis of dislocation clusters in multicrystalline silicon ingot by approach of data science

被引：17

作者：

Hayama, Yusuke ^{[1
]}

Matsumoto, Tetsuya ^{[2
]}

Muramatsu, Tetsuro ^{[1
]}

Kutsukake, Kentaro ^{[3
]}

Kudo, Hiroaki ^{[2
]}

Usami, Noritaka ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan

[2] Nagoya Univ, Grad Sch Informat, Nagoya, Aichi 4648601, Japan

[3] Nagoya Univ, Inst Innovat Future Soc, Nagoya, Aichi 4648601, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2019年 / 189卷

基金：

日本科学技术振兴机构;

关键词：

Dislocation; Multicrystalline silicon; Data science; MULTI-CRYSTALLINE SILICON; DIRECTIONAL SOLIDIFICATION; SOLAR-CELLS; QUALITY; GROWTH; SI;

D O I：

10.1016/j.solmat.2018.06.008

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We report on our attempt to perform the three-dimensional (3D) visualization of dislocation clusters in multi crystalline silicon (mc-Si) ingot by processing photoluminescence (PL) images and analysis of dislocation clusters in me-Si. As-sliced wafers prepared using a high-performance (HP) me-Si ingot were sequentially measured by PL imaging with intentional superposition of reflection. Then, various image processing techniques were applied to all the PL images to extract dark regions, which most likely correspond to dislocation clusters, as well as microstructures. By 3D reconstruction using a large quantity of 2D images, we could successfully visualize the generation, propagation and annihilation of dislocation clusters in HP me-Si ingot. In addition, relationship between source region of dislocation clusters and crystal orientation were investigated by combining data scientific and experimental approaches. As a result, it was suggested that small angle grain boundaries with angular deviation of less than 10 degrees cause the generation of dislocation clusters.

引用

页码：239 / 244

页数：6

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